Art

J-GLOBAL ID：201702237534725785   Reference number：17A1181733

Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

両面陽極酸化多孔質アルミナを用いた抵抗スイッチングメモリ構造の作製【Powered by NICT】

Author (3)： Morishita Yoshitaka (Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan) ,  Hosono Takaya (Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan) ,  Ogawa Hiroto (Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 131  Page： 30-33  Publication year： 2017 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Double-sides of aluminum sheet...

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Thesaurus term： *switching ,  pore ,  *anodic oxidation ,  Electroplating ,  insulator ,  Nickel ,  reversible change ,  electric current ,  *resistive switching memory ,  *porous alumina
Semi thesaurus term： バイアス電圧 , 【Automatic Indexing@JST】

Author keywords (5)： ReRAM ,  Nonvolatile memory ,  Anodic porous alumina ,  Electroplating ,  Conductive filament

JST classification (2)： Transistors  (NC03070N) ,  Semiconductor integrated circuit  (NC03162T)

Terms in the title (5)： 両面 ,  陽極酸化 ,  多孔質アルミナ ,  抵抗スイッチングメモリ ,  作製