Art

J-GLOBAL ID：201702237743813883   Reference number：17A0093048

Metal-semiconductor transition of mineral tetrahedrite Cu₁₂Sb₄S₁₃ investigated by photoemission and soft x-ray absorption spectroscopies

光電子および軟X線吸収分光法によって調べた鉱物四面銅鉱Cu₁₂Sb₄S₁₃の金属-半導体転移

Author (17)： NAGASAKI T. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  ROUSULI A. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  NAKAMURA S. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  SATO H. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  TANAKA H.I. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  SUEKUNI K. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  NAKATAKE M. (Aichi Synchrotron Radiation Center, Aichi, JPN) ,  KUTLUK G. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  SAWADA M. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  MIMURA K. (Osaka Prefecture Univ., Osaka, JPN) ,  ANZAI H. (Osaka Prefecture Univ., Osaka, JPN) ,  ICHIKI K. (Osaka Prefecture Univ., Osaka, JPN) ,  UEDA S. (National Inst. Materials Sci., Hyogo, JPN) ,  SHIMADA K. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  TAKABATAKE T. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  NAMATAME H. (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  TANIGUCHI M. (Hiroshima Univ., Higashi-Hiroshima, JPN)
Material： Proceedings of the Hiroshima International Symposium on Synchrotron Radiation  (Proc Hiroshima Int Symp Synchrotron Radiat)
Volume： 20th  Page： 119-120  Publication year： 2016 
JST Material Number： L6805A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *sulfosalt mineral ,  *copper compound ,  antimony compound ,  sulfide (chalcogenide) ,  *metal-semiconductor transition ,  *Photoelectron Spectroscopy ,  soft X-ray ,  spectrophotometry (analysis) ,  electronic structure ,  electronic state ,  surface reconstruction ,  band structure ,  *tetrahedrite
Semi thesaurus term： *tetrahedrite

JST classification (2)： Electron spectroscopy  (BM09060K) ,  X-ray instruments and techniques  (BA02060D)

Terms in the title (6)： 光電子 ,  軟X線 ,  吸収分光法 ,  鉱物 ,  四面銅鉱 ,  金属-半導体転移