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J-GLOBAL ID：201702237984271209   Reference number：17A0132821

Sign-changing non-monotonic voltage gain of HfO₂/Parylene-C/SrTiO₃ field-effect transistor due to percolative insulator to two-dimensional metal transition

パーコレーション絶縁体から2次元金属への転移に伴うHfO₂/Parylene-C/SrTiO₃電界効果トランジスタの非単調電圧利得の符号変化

Author (4)： Schulman Alejandro (National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba 305-8565, Japan) ,  Kitoh Ai (National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba 305-8565, Japan) ,  Stoliar Pablo (National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba 305-8565, Japan) ,  Inoue Isao H. (National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba 305-8565, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 110  Issue： 1  Page： 013502-013502-4  Publication year： Jan. 02, 2017 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Controlling the insulator-to-2...

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Thesaurus term： percolation ,  *metal-insulater transition ,  *hafnium oxide ,  *polyxylylene ,  *strontium titanate ,  *FET ,  characteristic
Semi thesaurus term： insulator-metal transition ,  parylene ,  device characteristic

JST classification (3)： Crystal structure of metal oxides and chalcogenides  (BK07020Y) ,  Metal-insulator transitions  (BM02110T) ,  Transistors  (NC03070N)

Terms in the title (8)： パーコレーション ,  絶縁体 ,  2次元 ,  HfO2 ,  Parylene ,  電界効果トランジスタ ,  電圧利得 ,  符号