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J-GLOBAL ID：201702240029011220   Reference number：17A1244766

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

MOVPEを用いて作製したm面GaN Schottky障壁ダイオードの漏れ電流とキャリア濃度のファセット依存性【Powered by NICT】

Author (12)： Tanaka Atsushi (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Barry Ousmane1 (Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Nagamatsu Kentaro (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Matsushita Junya (Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Deki Manato (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Ando Yuto (Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Kushimoto Maki (Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Nitta Shugo (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Honda Yoshio (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Amano Hiroshi (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Amano Hiroshi (Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan) ,  Amano Hiroshi (Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 214  Issue： 8  Page： null  Publication year： 2017 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： In this study, GaN m-plane Sch...

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Thesaurus term： crystal ,  *Schottky barrier diode ,  *leakage current ,  microscope ,  *MOCVD ,  *carrier density ,  photoluminescence ,  *gallium nitride ,  *facet ,  cathodoluminescence ,  *diode ,  oxygen concentration
Semi thesaurus term： 逆バイアス , 【Automatic Indexing@JST】

Author keywords (6)： charge carrier concentration ,  crystal facets ,  GaN ,  leakage current ,  nonpolar surfaces ,  Schottky diodes

JST classification (2)： Diodes  (NC03050R) ,  Semiconductor-metal contacts  (BM03084G)

Terms in the title (8)： MOVPE ,  作製 ,  GaN ,  Schottky障壁ダイオード ,  漏れ電流 ,  キャリア濃度 ,  ファセット ,  依存性