Art

J-GLOBAL ID：201702242036671029   Reference number：17A0777153

Vacuum Annealing and Passivation of HfS₂ FET for Mitigation of Atmospheric Degradation

大気による劣化軽減のためのHfS₂ FETの真空アニールとパッシベーション

Author (3)： UPADHYAYA Vikrant (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology) ,  KANAZAWA Toru (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology) ,  MIYAMOTO Yasuyuki (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E100.C  Issue： 5  Page： 453-457(J-STAGE)  Publication year： 2017 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *hafnium compound ,  *sulfur compound ,  *FET ,  annealing (heat treatment) ,  passivation ,  atmosphere (location) ,  degradation (alteration) ,  electric current ,  reliability (ratio) ,  integrated circuit reliability ,  modification ,  degree
Semi thesaurus term： anneal treatment ,  passivation ,  drain current ,  integrated circuit reliability

Author keywords (6)： HfS₂ ,  field effect transistors ,  environmental degradation ,  passivation ,  PMMA ,  vacuum annealing

JST classification (1)： Transistors  (NC03070N)

Reference (17)：

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Terms in the title (5)： 大気 ,  FET ,  真空 ,  アニール ,  パッシベーション