Art

J-GLOBAL ID：201702246851691836   Reference number：17A0513617

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

265nmで発光する大面積AlNナノフォトニック光抽出構造を用いた150mW深紫外発光ダイオード

Author (3)： Inoue Shin-ichiro (Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492, Japan) ,  Tamari Naoki (Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492, Japan) ,  Taniguchi Manabu (Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 110  Issue： 14  Page： 141106-141106-5  Publication year： Apr. 03, 2017 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： High-power 265 nm deep-ultravi...

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Thesaurus term： engineering ,  efficiency ,  aluminum nitride ,  compound semiconductor ,  *light emitting diode ,  *aluminum compound ,  *gallium compound ,  *nitride ,  lithography
Semi thesaurus term： nanophotonics ,  light extraction efficiency ,  *deep-ultraviolet light-emitting diode ,  *AlGaN ,  nanoimprint lithography

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (3)： 大面積 ,  AlN ,  深紫外発光ダイオード