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J-GLOBAL ID：201702246911530190   Reference number：17A1421020

Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO₂ films

相転移VO_2膜を有する層状型デバイスのための底部電極としてのTiNとTiN/Tiの比較研究【Powered by NICT】

Author (3)： Mian Md. Suruz (Department of Prime Mover Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan) ,  Okimura Kunio (Department of Electrical and Electronic Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan) ,  Kohzaki Masao (Department of Mechanical Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan)
Material： Thin Solid Films
Volume： 636  Page： 63-69  Publication year： 2017 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： DC-sputtered TiN and TiN/Ti co...

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Thesaurus term： X-ray photoelectron spectroscopy ,  gettering ,  depth profile ,  *phase transition ,  substrate temperature ,  *Titanium ,  oxidation ,  metal-semiconductor transition ,  Oxygen ,  antioxidant capacity ,  conductive layer ,  Si wafer ,  *titanium nitride

Author keywords (5)： Vanadium dioxide ,  Layered device ,  Titanium nitride ,  Oxidation ,  X-ray photoelectron spectroscopy

JST classification (1)： Thin films of other inorganic compounds  (BK14060A)

Terms in the title (5)： 相転移 ,  層状 ,  TiN ,  Ti ,  研究