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J-GLOBAL ID：201702250229252885   Reference number：17A0214229

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET

サブ5nm単分子層MoS_2FETのためのn/p型手術と界面障壁低下によるSi TMD接触の数値的研究【Powered by NICT】

Author (17)： Tang Ying-Tsan (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Li Kai-Shin (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Li Lain-Jong (Physical Sci. and Eng., King Abdullah University of Sci. and Technology, Kingdom of Saudi Arabia) ,  Li Ming-Yang (Physical Sci. and Eng., King Abdullah University of Sci. and Technology, Kingdom of Saudi Arabia) ,  Lin Chang-Hsien (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Chen Yi-Ju (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Chen Chun-Chi (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Su Chuan-Jung (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Wu Bo-Wei (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Wu Cheng-San (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Chen Min-Cheng (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Shieh Jia-Min (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Yeh Wen-Kuan (National Nano Device Laboratories, National Applied Research Laboratories, Taiwan) ,  Su Po-Cheng (Dept. of Electronics Eng., National Chiao-Tung University, Taiwan) ,  Wang Tahui (Dept. of Electronics Eng., National Chiao-Tung University, Taiwan) ,  Yang Fu-Liang (Research Center for Applied Sci., Academia Sinica, Taiwan) ,  Hu Chenming (Dept. of Electrical Eng. and Computer Science, University of California, Berkeley, USA)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 14.3.1-14.3.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： An atomic-scale numerical stud...

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Thesaurus term： monolayer ,  *interface (surface) ,  contact resistance ,  channel ,  semiconductor material ,  production technology ,  first principle ,  chalcogenide ,  *silicon ,  simulation ,  *monomolecular layer ,  Schottky barrier height ,  atomic-scale
Semi thesaurus term： 設計指針 ,  数値研究 , 【Automatic Indexing@JST】

JST classification (9)： Electric conduction in other inorganic compounds  (BM03044O) ,  Semiconductor thin films  (BK14040E) ,  Transistors  (NC03070N) ,  Fusion devices  (BJ02083Z) ,  Electronic structure of molecules  (BH05010Q) ,  Electron spectroscopy  (BM09060K) ,  General theory of electronic transport  (BM03020C) ,  Electrochemistry in general  (CB07010N) ,  Photoemission and photoelectrons  (BM09030D)

Terms in the title (9)： サブ ,  単分子層 ,  手術 ,  界面 ,  障壁 ,  Si ,  TMD ,  数値 ,  研究