Art

J-GLOBAL ID：201702257039658514   Reference number：17A1223646

Special features of Fowler-Nordheim stress degradation of SiC-MOSFETs

SiC-MOSFETのFowler-Nordheimストレス劣化の特徴

Author (3)： MURAKAMI Eiichi (Kyushu Sangyo Univ., Fukuoka, JPN) ,  ODA Kazuhiro (Kyushu Sangyo Univ., Fukuoka, JPN) ,  TAKESHITA Tatsuya (Kyushu Sangyo Univ., Fukuoka, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 55  Issue： 4S  Page： 04ER14.1-04ER14.6  Publication year： Apr. 2016 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,  *MOSFET ,  *Fowler-Nordheim tunneling ,  degradation(alteration) ,  high temperature ,  stability ,  gate dielectric film ,  completeness ,  voltage ,  electric charge ,  analytical model ,  conduction band ,  band structure ,  surface level ,  carrier mobility ,  carrier density ,  bias ,  carrier capture ,  electron capture ,  interface(surface)
Semi thesaurus term： gate oxide ,  gate voltage ,  band edge ,  temperature stability ,  interface state ,  hole trapping ,  trapped charge

JST classification (2)： Transistors  (NC03070N) ,  Electrical properties of interfaces in general  (BM03081H)

Reference (38)：

• J. W. Palmour, IEEE IEDM Tech. Dig., 2014, 1.1.1.
• H. Matsunami, N. Ohtani, K. Kimoto, and T. Nakamura, Handotai SiC Gijutsu to Oyo (Technology of Semiconductor SiC and Its Application) (Nikkan Kogyo Shinbun, Tokyo, 2011) 2nd ed. [in Japanese].
• G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K Chanana, R. A, Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).
• J Rozen, A. C. Ahyi, X. Z. Zhu, J. R. Williams, and L. C. Feldman, IEEE Trans. Electron Devices 58, 3808 (2011).
• A J. Lelis, R. Green, D. B Habersat, and M. El, IEEE Trans. Electron Devices 62, 316 (2015).

Terms in the title (1)： ストレス