Art

J-GLOBAL ID：201702263103175120   Reference number：17A0590289

Demonstration of a mid-wavelength infrared narrowband thermal emitter based on GaN/AlGaN quantum wells and a photonic crystal

GaN/AlGaN量子井戸とフォトニック結晶に基づく中赤外線狭帯域熱放射体の実証

Author (4)： Kang Dongyeon Daniel (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan) ,  Inoue Takuya (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan) ,  Asano Takashi (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan) ,  Noda Susumu (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 110  Issue： 18  Page： 181109-181109-4  Publication year： May. 01, 2017 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We experimentally demonstrate ...

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Thesaurus term： *gallium nitride ,  *aluminum compound ,  *gallium compound ,  *nitride ,  *quantum well ,  *photonic crystal ,  *infrared radiation ,  narrow band ,  *thermal radiation ,  multiple quantum well ,  electronic transition ,  *optical resonator ,  thermal stability ,  stability ,  radiant intensity ,  *gas sensor ,  gas detector ,  *light emitting diode ,  *semiconductor thin film
Semi thesaurus term： GAN ,  *AlGaN ,  *mid infrared ,  intersubband transition ,  photonic crystal resonator ,  temperature stability ,  emission intensity ,  *light emitting diode

JST classification (3)： Light emitting devices  (NC03082G) ,  Lasers in general  (BD04030T) ,  Semiconductor thin films  (BK14040E)

Terms in the title (8)： GaN ,  AlGaN ,  量子井戸 ,  フォトニック結晶 ,  中赤外線 ,  狭帯域 ,  放射体 ,  実証