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J-GLOBAL ID:201702267261134390   Reference number:17A0417535

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

LXIVワード線層BiCS技術に関する11.1 512Gb3b/セルのフラッシュメモリ【Powered by NICT】
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Volume: 2017  Issue: ISSCC  Page: 196-197  Publication year: 2017 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor integrated circuit 
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