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J-GLOBAL ID：201702268078473165   Reference number：17A1728364

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

CBRAM細胞のDC特性に及ぼす14MeV中性子照射の影響【Powered by NICT】

Author (8)： Taggart J. L. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Fang R. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Gonzalez-Velo Y. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Barnaby H. J. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Kozicki M. N. (School of Electrical, Computer and Energy Engineering and the Center for Applied Nano-Ionics, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Chamele N. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Mahmud A. (School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA) ,  Mitkova M. (Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725, USA)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： RADECS  Page： 1-4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： CBRAM cells were irradiated wi...

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Thesaurus term： *neutron ,  fluence ,  *neutron irradiation ,  displacement damage ,  neutron fluence

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (3)： CBRAM ,  細胞 ,  中性子照射