Art
J-GLOBAL ID:201702270183156813   Reference number:17A1221109

Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC(11220) heterojunction

4H-AlN/4H-SiC(1120)ヘテロ接合の光電子回折による界面原子サイト特性化
Author (8):
Material:
Volume: 55  Issue:Page: 085701.1-085701.4  Publication year: Aug. 2016 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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JST classification
Category name(code) classified by JST.
Semiconductor thin films 

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