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J-GLOBAL ID：201702272080627793   Reference number：17A0214206

Experimental demonstration of -730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications

相補型インバータ応用のための高短絡耐能力を持つ 730V垂直SiC MOSFETの実験的実証【Powered by NICT】

Author (6)： An Junjie (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ,  Namai Masaki (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ,  Tanabe Mikiko (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ,  Okamoto Dai (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ,  Yano Hiroshi (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ,  Iwamuro Noriyuki (Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 10.7.1-10.7.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A new p-channel vertical 4H-Si...

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Thesaurus term： *silicon carbide ,  *MOSFET ,  HF ,  channel ,  breakdown voltage
Semi thesaurus term： パワーデバイス ,  4H-SiC ,  *相補型インバータ , 【Automatic Indexing@JST】

JST classification (2)： Transistors  (NC03070N) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (9)： 相補型インバータ ,  応用 ,  短絡 ,  能力 ,  垂直 ,  SiC ,  MOSFET ,  実験 ,  実証