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J-GLOBAL ID：201702275297083726   Reference number：17A1221110

Influence of the oxide thickness of a SiO₂/Si(001) substrate on the optical second harmonic intensity of few-layer MoSe₂

数層MoSe₂の光学二次高調波強度に及ぼすSiO₂/Si(001)基板の酸化物厚みの影響

Author (7)： MIYAUCHI Yoshihiro (National Defense Acad. of Japan, Kanagawa, JPN) ,  MORISHITA Ryo (Yokohama National Univ., Yokohama, JPN) ,  TANAKA Masatoshi (Yokohama National Univ., Yokohama, JPN) ,  OHNO Sinya (Yokohama National Univ., Yokohama, JPN) ,  MIZUTANI Goro (Japan Advanced Inst. of Sci. and Technol., Ishikawa, JPN) ,  SUZUKI Takanori (National Defense Acad. of Japan, Kanagawa, JPN) ,  SUZUKI Takanori (Yokohama National Univ., Yokohama, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 55  Issue： 8  Page： 085801.1-085801.4  Publication year： Aug. 2016 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *Second Harmonic Generation ,  silicon dioxide ,  *selenide(chalcogenide) ,  *molybdenum compound ,  thin film ,  higher harmonic ,  polarized light ,  *film thickness
Semi thesaurus term： *molybdenum selenide ,  second harmonic ,  nonlinear optical property ,  polarization rotation ,  *film thickness dependence

JST classification (1)： Nonlinear optics  (BD05000T)

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Terms in the title (6)： 光学 ,  二次高調波 ,  SiO2 ,  Si ,  酸化物 ,  厚み