Art

J-GLOBAL ID：201702276353845072   Reference number：17A0080170

Effect of Element Substitution at V site on Thermoelectric Properties of Aurivillius Phase Bi2VO5.5

Aurivillius相Bi₂VO_5.5の熱電特性におけるVサイトの元素置換の影響

Author (2)： Kohri Hitoshi (School of Advanced Engineering, Kogakuin University, Tokyo, Japan) ,  Yagasaki Takayoshi (School of Advanced Engineering, Kogakuin University, Tokyo, Japan)
Material： Journal of Electronic Materials  (J Electron Mater)
Volume： 45  Issue： 10  Page： 4928-4934  Publication year： Oct. 2016 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： *phase (thermodynamics) ,  *vanadium oxide ,  *bismuth oxide ,  *electrical characteristic ,  *displacement (replacement) ,  layered compound ,  transport coefficient ,  Seebeck coefficient ,  layered perovskite ,  *vanadium(V) pentaoxide
Semi thesaurus term： *Aurivillius phase ,  *vanadium pentaoxide ,  *thermoelectric characteristic

Author keywords (4)： Aurivillius compound ,  Bi layered oxide ,  oxygen ion conductor ,  thermoelectric oxide

JST classification (2)： Electrical properties  (WB02010Y) ,  Oxide thin films  (BK14050P)

Terms in the title (4)： Aurivillius相 ,  熱電特性 ,  元素 ,  置換