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J-GLOBAL ID：201702276830159286   Reference number：17A1020056

Effect of V/III ratio on the surface morphology and electrical properties of m-plane ( 10 1 0 ) GaN homoepitaxial layers

表面形態とm面(101 0)GaNホモエピタキシャル層の電気的性質に及ぼすV/III比の影響【Powered by NICT】

Author (11)： Barry Ousmane I (Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Tanaka Atsushi (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Nagamatsu Kentaro (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Bae Si-Young (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Lekhal Kaddour (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Matsushita Junya (Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Deki Manato (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Nitta Shugo (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Honda Yoshio (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Amano Hiroshi (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan) ,  Amano Hiroshi (Akasaki Research Center, Nagoya University, Nagoya, Aichi 464-8603, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 468  Page： 552-556  Publication year： 2017 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： We have investigated the effec...

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Thesaurus term： *electrical property ,  *morphology (form) ,  pyramid ,  gallium nitride ,  MOCVD ,  impurity ,  *HOMO ,  Oxygen ,  Schottky barrier diode ,  facet ,  leakage current ,  electrical characteristic ,  *epitaxial layer ,  *surface morphology
Semi thesaurus term： ヒロック , 【Automatic Indexing@JST】

Author keywords (5)： A1. Morphology ,  A1. Impurities ,  A3. Organometallic vapor phase epitaxy ,  B2. m-plane Gallium Nitride ,  B3. Vertical Schottky barrier diodes

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： 表面形態 ,  GaN ,  ホモ ,  エピタキシャル層 ,  電気的性質