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J-GLOBAL ID：201702281455923485   Reference number：17A1727321

Simulation based DC and dynamic behaviour characterization of Z2FET

シミュレーションはZ2FETのDCおよび動的挙動に基づいた特性化【Powered by NICT】

Author (9)： Adamu-Lema F. (School of Engineering, University of Glasgow, Scotland, Glasgow, G12 8LT, UK) ,  Duan M. (School of Engineering, University of Glasgow, Scotland, Glasgow, G12 8LT, UK) ,  Navaro C. (University of Granada) ,  Georgiev V. (School of Engineering, University of Glasgow, Scotland, Glasgow, G12 8LT, UK) ,  Cheng B. (Synopsys, 133 Finnieston street, Glasgow G3 8HB, UK) ,  Wang X. (Synopsys, 133 Finnieston street, Glasgow G3 8HB, UK) ,  Millar C. (Synopsys, 133 Finnieston street, Glasgow G3 8HB, UK) ,  Gamiz F. (School of Engineering, University of Glasgow, Scotland, Glasgow, G12 8LT, UK) ,  Asenov A. (Synopsys, 133 Finnieston street, Glasgow G3 8HB, UK)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： SISPAD  Page： 317-320  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This work presents a TCAD inve...

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Thesaurus term： memory(computer) ,  bias ,  *characterization ,  hysteresis ,  memory element ,  operation mode
Semi thesaurus term： 力学的性質 ,  TCAD ,  *動的挙動 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (4)： シミュレーション ,  DC ,  動的挙動 ,  特性化