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J-GLOBAL ID：201702281461566172   Reference number：17A0180913

THz quantum cascade lasers with low effective mass active region

低有効質量活性領域を用いたTHz量子カスケードレーザ【Powered by NICT】

Author (9)： Brandstetter M. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Krall M. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Kainz M. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Schonhuber S. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Deutsch C. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Zederbauer T. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Andrews A. M. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Strasser G. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria) ,  Unterrainer K. (Photonics Institute and Center for Micro&Nanostructures, Technische Universitaet Wien, Vienna, Austria)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IPC  Page： 70-71  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The development of InGaAs base...

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Thesaurus term： gallium arsenide ,  *active site ,  aluminum gallium arsenide ,  *quantum cascade laser ,  symmetry ,  indium gallium arsenide ,  interface(surface) ,  *effective mass

JST classification (1)： Semiconductor lasers  (BD04070L)

Terms in the title (3)： 有効質量 ,  活性領域 ,  量子カスケードレーザ