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J-GLOBAL ID:201702284748595194   Reference number:17A1138251

データ科学的手法を用いた多結晶Si中の転位発生・伝搬の可視化

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Volume: 78th  Page: ROMBUNNO.5a-A204-4  Publication year: Aug. 25, 2017 
JST Material Number: Y0055B  ISSN: 2758-4704  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Lattice defects in semiconductors  ,  Luminescence of semiconductors  ,  Graphic and image processing in general 
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