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J-GLOBAL ID：201702286760172624   Reference number：17A1809726

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi₂(Si_1-xGe_x)₂

Author (15)： ICHIKI Katsuya (Osaka Prefecture Univ., Sakai, JPN) ,  MIMURA Kojiro (Osaka Prefecture Univ., Sakai, JPN) ,  MIMURA Kojiro (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  ANZAI Hiroaki (Osaka Prefecture Univ., Sakai, JPN) ,  UOZUMI Takayuki (Osaka Prefecture Univ., Sakai, JPN) ,  SATO Hitoshi (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  UTSUMI Yuki (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  UEDA Shigenori (National Inst. Materials Sci. (NIMS), Hyogo, JPN) ,  UEDA Shigenori (National Inst. Materials Sci. (NIMS), Tsukuba, JPN) ,  MITSUDA Akihiro (Kyushu Univ., Fukuoka, JPN) ,  WADA Hirofumi (Kyushu Univ., Fukuoka, JPN) ,  TAGUCHI Yukihiro (Osaka Prefecture Univ., Sakai, JPN) ,  SHIMADA Kenya (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  NAMATAME Hirofumi (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  TANIGUCHI Masaki (Hiroshima Univ., Higashi-Hiroshima, JPN)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 96  Issue： 4  Page： 045106.1-045106.7  Publication year： Jul. 2017 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Country of issue： United States (USA)  Language： ENGLISH (EN)