URAKAMI Noriyuki

ウラカミノリユキ | URAKAMI Noriyuki

Affiliation and department：
Job title： Associate Professor

Research field (2)： Crystal engineering , Electric/electronic material engineering

Research keywords (2)：層状物質 , 機能性薄膜

Research theme for competitive and other funds (15)：

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Papers (28)：

Kota Higuchi, Masaki Tachibana, Noriyuki Urakami, Yoshio Hashimoto. Layered carbon nitride films deposited under an oxygen-containing atmosphere and their electronic properties. AIP Advances. 2024. 14. 2
Noriyuki Urakami, Masaya Fukai, Yoshio Hashimoto. Schottky barrier diode consisting of van der Waals heterojunction of MoS2 film and PtCoO2 contact. Solid-State Electronics. 2023. 207. 108685-108685
Noriyuki URAKIMI, Shinya Nakakura, Yoshio HASHIMOTO. Fabrication of a layered gallium selenide photodetector array via oxygen plasma etching. Applied Physics Express. 2023. 16. 056503
Noriyuki Urakami, Kensuke Takashima, Masahiro Shimizu, Yoshio Hashimoto. Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere. CrystEngComm. 2023. 25. 5. 877-883
Hayate Takeuchi, Noriyuki Urakami, Yoshio Hashimoto. Oxidation of tantalum disulfide (TaS₂) films for gate dielectric and process design of two-dimensional field-effect device. Nanotechnology. 2022. 33. 37. 375204-375204

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MISC (6)：

Investigation of formation conditions for boron carbon nitride film by chemical vapor deposition. 2017. 117. 268. 1-4
URAKAMI Noriyuki, WAKAHARA Akihiro, SEKIGUCHI Hiroto, OKADA Hiroshi. Formation of GaAsN alloys by surface nitridation. IEICE technical report. Component parts and materials. 2013. 113. 40. 23-26
FUKAMI Futoshi, URAKAMI Noriyuki, SEKIGUCHI Hiroto, OKADA Hiroshi, WAKAHARA Akihiro. Improvement in crystalline quality of GaAsN alloy by high temperature growth. IEICE technical report. Component parts and materials. 2012. 112. 33. 7-10
URAKAMI Noriyuki, FUKAMI Futoshi, SEKIGUCHI Hiroto, OKADA Hiroshi, WAKAHARA Akihiro. Molecular beam epitaxy growth of BGaP. IEICE technical report. 2011. 111. 44. 55-58
URAKAMI Noriyuki, NOMA Ryosuke, UMENO Kazuyuki, MITSUYOSHI Saburo, OKADA Hiroshi, FURUKAWA Yuzo, WAKAHARA Akihiro. Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots. IEICE technical report. 2009. 109. 24. 71-76

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Lectures and oral presentations (122)：

窒素過剰層状窒化炭素膜の構造分析
(第71回応用物理学会春季学術講演会 2024)
リン添加層状窒化炭素膜の電子輸送
(第71回応用物理学会春季学術講演会 2024)
二次元物質の積層による多層膜構造の設計と作製
(第71回応用物理学会春季学術講演会 2024)
層状ヒ化ゲルマニウム膜の酸化による膜厚制御
(第71回応用物理学会春季学術講演会 2024)
積層構造によるα相セレン化インジウムの電気的特性の評価
(第84回応用物理学会秋季学術講演会 2023)

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Education (4)：

2012 - 2015 Toyohashi University of Technology Electrical and Electron Information Engineerign
2009 - 2012 豊橋技術科学大学工学研究科修士課程電気・電子工学専攻
2007 - 2009 Toyohashi University of Technology
2002 - 2007 Tsuyama National College of Technology

Professional career (1)：

Work history (3)：

2024/04 - 信州大学, 工学部電子情報システム工学科准教授
2016/04 - 2024/03 Shinshu University Faculty of Engineering Electrical and Computer Engineering
2015/04 - 2016/03 Shinshu University Faculty of Engineering, Electrical and Electronic Engineering

Committee career (5)：

Association Membership(s) (2)：

Japan Society of Applied Physics , 応用物理学会

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