Imanishi Masayuki

イマニシマサユキ | Imanishi Masayuki

Affiliation and department：

Research field (1)： Electric/electronic material engineering

Research keywords (7)：酸化ガリウム , パワーデバイス , ワイドギャップ半導体 , 結晶成長 , point seed , Na-Flux method , GaN

Research theme for competitive and other funds (9)：

2024 - 2029 Improvement of hetero epitaxial growth using graphene
2025 - 2028 OVPE法を用いたMgイオン注入GaNの新規活性化プロセス開発
2025 - 2028 Development of technology to suppress device killer defect in GaN crystals using three-dimensional growth mode in Na flux method
2023 - 2026 OVPE法による口径拡大・超厚膜GaNインゴット作製技術
2021 - 2023 Growth technique of high quality gallium oxide crystal by toxic gas-free OVPE method

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Papers (105)：

Masayuki Imanishi, Kanako Okumura, Kosuke Murakami, Kosuke Nakamura, Keisuke Kakinouchi, Kenichi Kawabata, Shigeyoshi Usami, Yusuke Mori. Suppression of Inclusions in GaN Crystals Caused by Giant Steps During Na-Flux Growth through the Flux-Film-Coated Technique. Crystal Growth & Design. 2025. 25. 15. 6277-6286
Shigeyoshi Usami, Ayumu Shimizu, Ritsuko Higashiyama, Masayuki Imanishi, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Mihoko Maruyama, Masashi Yoshimura, Masahiko Hata, et al. High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method. Japanese Journal of Applied Physics. 2025. 64. 5. 055504-1-055504-5
Ryotaro Sasaki, Masayuki Imanishi, Shogo Washida, Kosuke Murakami, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori. Effects of morphology during coalescence of GaN crystals on dislocation behavior in the Na-flux point seed technique. Japanese Journal of Applied Physics. 2025. 64. 5. 055502-1-055502-10
Takahiro Kawamura, Ryogo Nishiyama, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura. Thermal conductivity of GaN with a vacancy and an oxygen point defect. Journal of Crystal Growth. 2025. 649. 127948-1-127948-6
S. Usami, R. Higashiyama, M. Imanishi, J. Takino, T. Sumi, Y. Okayama, M. Yoshimura, M. Hata, M. Isemura, Y. Mori. Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy. Journal of Applied Physics. 2024. 136. 8

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MISC (30)：

西山稜悟, 河村貴宏, 秋山亨, 宇佐美茂佳, 今西正幸, 吉村政志, 吉村政志, 森勇介. Effect of point defects on thermal conductivity of GaN. 結晶成長国内会議予稿集(CD-ROM). 2023. 52nd
道端詩, 丸山美帆子, 丸山美帆子, 田中勇太朗, 田中勇太朗, 吉村政志, 西村良浩, 植村真結, 塚本勝男, 塚本勝男, et al. Observation of surface dissolution of Calcium Oxalate Dihydrate crystals through using human kidney stones. 結晶成長国内会議予稿集(CD-ROM). 2023. 52nd
鷲田将吾, TANDRYO Ricksen, 中島達彦, 村上航介, 今西正幸, 宇佐美茂佳, 丸山美帆子, 吉村政志, 森勇介. Dependence of crystallinity of GaN crystals grown by the Na flux point seed technique on the off-angle of the seed substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
Yamauchi Hyoga, Tandryo Ricksen, Yamada Takumi, Murakami Kosuke, Usami Shigeyoshi, Imanishi Masayuki, Maruyama Mihoko, Maruyama Mihoko, Maruyama Mihoko, Yoshimura Masashi, et al. Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method. Japanese Journal of Applied Physics (Web). 2022. 61. 5
Junichi Takino, Tomoaki Sumi, Shigeyoshi Usami, Masayuki Imanishi, Yoshio Okayama, Yusuke Mori. Development of Ultra-Low Resistance and Low Dislocation Density GaN Substrates and their Device Applications. 2021. 48. 3. 3-02

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Patents (86)：

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Books (1)：

Lectures and oral presentations (296)：

OVPE法を用いたMgイオン注入GaNの大気圧活性化手法の提案
(電気学会「化合物半導体を用いた次世代高機能デバイス技術とアプリケーション」調査専門委員会 2025)
Naフラックス法における横方向成長を活用した {20-21} 面GaN結晶の転位密度低減
(第54回結晶成長国内会議 2025)
Naフラックス法においてGaN種結晶品質が酸素不純物誘起ファセット成長に与える影響
(第54回結晶成長国内会議 2025)
The dependence of thermal conductivity on oxygen concentration in GaN grown by OVPE method
(The 8th International Symposium on Growth of III-Nitrides (ISGN-8) 2025)
Surface Planarization and Reduction of Threading Dislocation Density of GaN Crystals after Facet Growth in the Na-flux Method
(The 8th International Symposium on Growth of III-Nitrides (ISGN-8) 2025)

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Education (3)：

2013 - 2016 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
2012 - 2013 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
- 2012 Osaka University School of Engineering

Professional career (1)：

Work history (5)：

2020/10 - 現在 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
2018/04 - 現在 Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies Assistant Professor
2018 - 2020/09 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Infocommunications Engineering Assistant Professor
2016/09 - 2018/03 Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies
2016/04 - 2016/08 Osaka University Graduate School of Engineering

Committee career (3)：

Awards (12)：

2024/10 - 第43回電子材料シンポジウム EMS賞
2024/05 - * Terahertz Time-Domain Ellipsometry with Highly Improved Precision and Its Application on Wide-Bandgap Semiconductor GaN
2022/12 - 日本結晶成長学会日本結晶成長学会講演奨励賞 OVPE法によるβ相酸化ガリウム結晶のエピタキシャル成長
2022/06 - フジサンケイビジネスアイ第35回独創性を拓く先端技術大賞社会人部門特別賞 Naフラックス法とOVPE法を組み合わせた高品質・大型GaN結晶成長技術 ~脱炭素社会化に貢献するGaNデバイスの普及を目指して~
2020/09 - 応用物理学会論文賞 Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method

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Association Membership(s) (3)：

日本結晶成長学会 , 応用物理学会結晶工学分科会 , 応用物理学会

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