Research field (3):
Semiconductors, optical and atomic physics
, Crystal engineering
, Electric/electronic material engineering
Research keywords (2):
半導体物性
, 結晶成長
Research theme for competitive and other funds (5):
2022 - 2025 liquid phase epitaxy of nitride semiconductor thin films under an atmospheric pressure nitrogen ambience
2016 - 2019 窒化物半導体ステップフリー面を利用した新規分子層エピタキシ
2014 - 2017 Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method
2010 - 2013 窒化物半導体ステップフリーヘテロ構造の研究
2006 - 2010 六方晶BN窒化物半導体に関する研究
Papers (85):
Masataka Katsuumi, Tetsuya Akasaka. Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience. Japanese Journal of Applied Physics. 2024. 63. 6. 065501-065501
Liquid Phase Epitaxy of GaN Films on Sapphire Substrates under an Atmospheric Pressure Nitrogen Ambience
(The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023)
Liquid Phase Epitaxy of GaN Films under an Atmospheric Pressure Nitrogen Ambience
(The 15th Asia Pacific Physics Conference 2022)
N-face (000-1) GaN/InN/GaN double-heterostructures emitting near-IR photoluminescence grown by metalorganic vapor phase epitaxy
(International Workshop on Nitride Semiconductors 2018 2018)
One- or two-monolayer-thick InN single quantum wells fabricated on step-free GaN surfaces
(19th International Conference on Metalorganic Vapor Phase Epitaxy 2018)
MOVPE growth of wurtzite BN-related alloys
(12th International Conference on Nitride Semiconductors 2017)