Rchr
J-GLOBAL ID：201801015029357035
Update date: Apr. 08, 2026
Hatakeyama Tetsuo
ハタケヤマ テツオ | Hatakeyama Tetsuo
Affiliation and department：
Job title：
Professor
Homepage URL (1)：
https://scholar.google.co.jp/citations?user=HDMVl-QAAAAJ&hl=ja
Research field (2)：
Semiconductors, optical and atomic physics
, Electric/electronic material engineering
Research keywords (5)：
Device simulation
, SiC MOS interface
, SiC power device
, Wide bandgap semiconductor
, SiC
Research theme for competitive and other funds (4)：
- 2026 - 2029 SiC-MOSFET界面物性と信頼性劣化機構解明による次世代デバイス設計基盤技術の確立
- 2023 - 2026 SiC-MOS界面移動度の主劣化要因となる散乱体の物理的実体の解明
- 2019 - 2022 A study on scattering mechanisms of inversion layer mobility in SiC MOSFETs
- 1990 - 1990 ホウ素固体の電子構造および物性
Papers (116)：
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Kazuma Shimura, Dai Okamoto, Yuta Taguchi, Kenta Kimata, Mitsuru SOMETANI, Hirohisa Hirai, Mitsuo Okamoto, Tetsuo HATAKEYAMA. TCAD and experimental study of geometric components in charge pumping current for accurate characterization of interface trap density in SiC pMOSFETs. Japanese Journal of Applied Physics. 2026
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Naoto Ise, Toru Akiyama, Tetsuo Hatakeyama, Kenji Shiraishi, Takashi Nakayama. Theoretical analysis of 4H-SiC/SiO 2 interface structures and band alignments: effects of NO annealing. Japanese Journal of Applied Physics. 2026. 65. 3. 03SP06-03SP06
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Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. TCAD-Oriented Physical Modeling of Temperature-Dependent Inversion Layer Mobility in SiC MOSFETs. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2025. 1-4
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Shun Matsuda, Toru Akiyama, Tetsuo Hatakeyama, Kenji Shiraishi, Takashi Nakayama. First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO2 interface. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP69-02SP69
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Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
ｍore...
MISC (2)：
Lectures and oral presentations (81)：
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4H-SiC UMOSFETのゲートスイッチング時の発光とGSIのモデル
(第73回応用物理学会春季学術講演会(2026) 2026)
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4H-SiC/SiO2界面におけるバンド配列の理論解析: NOアニールと界面欠陥の影響の検討
(第73回応用物理学会春季学術講演会(2026) 2026)
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SiCにおけるショットキー障壁形成と電気伝導機構
(第3回半導体分野将来基金委員会・研究会(名取研究会)2025 2026)
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4H-SiC/SiO2界面構造とバンド配列の理論解析:NO アニール処理の影響
(電子デバイス界面テクノロジー研究会(第31回研究会、2025) 2026)
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TCAD-Oriented Physical Modeling of Temperature-Dependent Inversion Layer Mobility in SiC MOSFETs
(Asia Pacific Conference on SiC and Related Materials (APCSRM 2025) November 26, 2025 2025)
ｍore...
Education (4)：
- 1987 - 1990 The University of Tokyo Graduate School of Science Department of Physics, Doctoral Course
- 1985 - 1987 The University of Tokyo Graduate Schoo; of Science Master’s Course in Physics
- 1983 - 1985 The University of Tokyo Faculty of Science Department of Physics
- 1981 - 1983 The University of Tokyo College of Arts and Sciences
Professional career (1)：
- Ph.D. (The University of Tokyo)
Work history (5)：
- 2020/04 - 現在 Toyama Prefectural University Faculty of Engineering Department of Electric and Electronic Engineering Professor
- 2018/04 - 2020/03 Toyama Prefectural University Faculty of Engineering, Department of Electric and Computer Engineering Professor
- 2016/04 - 2018/03 National Institute of Advanced Industrial Technology Advanced Power Electronics Research Center
- 1997/03 - 2016/03 Toshiba Corporation Corporate R&D center
- 1991/04 - 1997/02 Kawasaki Steel Corporation
Association Membership(s) (1)：
THE JAPAN SOCIETY OF APPLIED PHYSICS
