Rchr
J-GLOBAL ID:201801017101688400   Update date: Nov. 01, 2024

Yokogawa Toshiya

ヨコガワ トシヤ | Yokogawa Toshiya
Affiliation and department:
Research field  (1): Optical engineering and photonics
Research theme for competitive and other funds  (2):
  • 2016 - 2018 窒化物半導体とカーボンナノチューブのヘテロ接合に関する物性および応用研究
  • 2016 - 2018 AlGaN系半導体を用いた真空チャンネルトランジスタに関する研究
Papers (66):
  • Masaki Fujikane, Shijo Nagao, Dariusz Chrobak, Toshiya Yokogawa, Roman Nowak. Room-Temperature Plasticity of a Nanosized GaN Crystal. Nano Letters. 2021. 21. 15. 6425-6431
  • Toshiya Yokogawa, Sachi Niki, Junko Maekawa, Masahiko Aoki, Masaki Fujikane. Dislocation Formation via an r-Plane Slip Initiated by Plastic Deformation during Nano-Indentation of a High Quality Bulk GaN Surface. MRS Advances. 2016. 1. 58. 3847-3852
  • Junko Sato-Iwanaga, Yang Liu, Robert W. Dutton, Hideaki Tsuchiya, Toshiya Yokogawa. Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate. Japanese Journal of Applied Physics. 2014. 53. 10. 102101-102101
  • Shunji Yoshida, Toshiya Yokogawa, Yasuhiko Imai, Shigeru Kimura. Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wells on m-Plane Using High-Resolution Microbeam X-ray Diffraction. Japanese Journal of Applied Physics. 2013. 52. 7R. 071001-071001
  • Masaki Fujikane, Toshiya Yokogawa, Shijo Nagao, Roman Nowak. Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal. Japanese Journal of Applied Physics. 2013. 52. 8S. 08JJ01-08JJ01
more...
MISC (4):
  • Toshiya YOKOGAWA. Tips for the characterization of LEDs. 2016. 85. 11. 963-967
  • 横川俊哉. GaN on GaN LED の研究動向,将来像. MATERIAL STAGE. 2015. 15. 3. 8-16
  • 横川俊哉. GaN 基板上高出力InGaN LED の開発. 機能材料. 2012. 32. 4. 4-9
  • 横川俊哉. ZnSe 系面発光レーザー. レーザー研究. 1997. 25. 514-519
Books (4):
  • Phosphor Handbook
    CRC Press 1998
  • 材料別接合技術データハンドブック
    (株)サイエンスフォーラム 1992
  • 先端技術評価のための電子顕微鏡技法
    (株)朝倉書店 1991
  • 最先端レーザ・テクノロジー集成
    (株)オプトロニクス社 1989
Lectures and oral presentations  (1):
  • High speed and high power in IR VCSEL
    (Technical Meeting on Optical and Quantum Devices 2022)
Professional career (1):
  • 工学博士 (名古屋大学大学院)
Work history (3):
  • 2018/04 - 2023/07 Seoul Semiconductor Inc. Central research institute
  • 2014/04 - 2018/03 Yamaguchi University Graduate School of Science and Engineering Professor
  • 1992/06 - 1994/10 University of California, Santa Barbara Department of Electrical and Computer Engineering Research fellow
Association Membership(s) (1):
The Japan Society of Applied Physics
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