Research field (3)：
Electronic devices and equipment
, Electric/electronic material engineering
, Electrical power engineering
Research keywords (5)：
GOI
, NBTI
, TDDB
, PBTI
, SiC-MOSFET
Papers (52)：
Eiichi Murakami, Mitsuo Okamoto. Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-annealed SiC-MOSFETs. IEEE Transactions on Electron Devices. 2021. 68. 3. 1207-1213
Eiichi Murakami, Tatsuya Takeshita, Kazuhiro Oda. TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching Operations. Materials Science Forum. 2020. 1004. 665-670
Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
(13 th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021) 2021)
TDDB lifetime enhancement of SiC-MOSFETs under gate-switching operation
(International Conference on Silicon Carbide and Related Materials 2019 2019)
