Rchr
J-GLOBAL ID：201801018641993071
Update date: Jul. 16, 2024
Nitta Shugo
ニッタ シュウゴ | Nitta Shugo
Affiliation and department：
Job title：
Designated associate professor
Research field (1)：
Crystal engineering
Research keywords (1)：
Nitride semiconductors
Papers (37)：
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Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
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Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
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Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic. Applied Physics Letters. 2023
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Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, Hiroshi Amano. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy. Journal of Applied Physics. 2022
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Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates. Journal of Crystal Growth. 2022. 592. 126749-126749
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MISC (27)：
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Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS. 2018. 57. 10
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Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2018. 215. 9
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Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy. APPLIED PHYSICS EXPRESS. 2018. 11. 5
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Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, et al. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate. APPLIED PHYSICS LETTERS. 2018. 112. 18
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Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate. 2017. 117. 332. 19-22
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Education (3)：
- 2000 - 2003 Meijo University Graduate School, Division of Science and Engineering
- 1998 - 2000 Meijo University Graduate School, Division of Science and Engineering
- 1994 - 1998 Meijo University Faculty of Science and Engineering
Professional career (1)：
Work history (5)：
- 2015/10/01 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Designated associate professor
- 2008/01/16 - 2015/09/30 TOYODA GOSEI Co., Ltd.
- 2007/04 - 2008/01 エルシード株式会社
- 2005/12 - 2007/03 Meijo University
- 2003/04 - 2005/11 日本イー・エム・シー株式会社
Association Membership(s) (2)：
the Japanese Association for Crystal Growth
, The Japan Society of Applied Physics
