KUSABA Akira

クサバアキラ | KUSABA Akira

Affiliation and department：
Job title： Associate Professor
Homepage URL (2)： https://sites.google.com/view/kusabalab , https://hyoka.ofc.kyushu-u.ac.jp/search/details/K007621/english.html

Research field (3)： Thin-film surfaces and interfaces , Crystal engineering , Computational science

Research keywords (5)： Crystal growth , Wide-gap semiconductor , Nitride semiconductor , First-principles calculation , Machine learning

Research theme for competitive and other funds (8)：

2024 - 2028 半導体化学気相成長の科学
2023 - 2028 Exploration of Crystal Surface Structures through Enumeration of Discrete Structures on an Infinite Plane and Similarity Design
2024 - 2027 大規模反応ネットワークで捉える気相成長理論の開拓
2021 - 2026 Study of fuel hydrogen circulation control with carbon pump
2020 - 2024 表面再構成インフォマティクスによる大規模周期構造の探索

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Papers (26)：

Karol Kawka, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski, Michal Bockowski, David Bowler, Akira Kusaba. Augmentation of the Electron Counting Rule with Ising Model. arXiv:2402.06140 [cond-mat.mtrl-sci]. 2024
Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa. Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations. Materials. 2023. 16. 17. 5982
Akira Kusaba, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa. Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy. Applied Physics Letters. 2022. 121. 162101
Akira Kusaba, Romeo Marcel Kurniawan, Pawel Kempisty, Yoshihiro Kangawa. DFT modeling of unintentional oxygen incorporation enhanced by magnesium in GaN(0001) and AlN(0001) growth surfaces during metalorganic vapor phase epitaxy. Physica Status Solidi B. 2022. 2100430
Akira Kusaba, Yoshihiro Kangawa, Tetsuji Kuboyama, Atsushi Oshiyama. Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization. Applied Physics Letters. 2022. 120. 021602

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MISC (9)：

草場彰, 寒川義裕. 計算科学と機械学習による窒化物半導体結晶成長の研究(研究室紹介). クリスタルレターズ. 2024. 85. 60-64
草場彰. 窒化ガリウム結晶成長への情報科学技術の活用(特集「JST ACT-X AI活用で挑む学問の革新と創成」). 日本ロボット学会誌. 2023. 41. 8. 680
草場彰, 寒川義裕, 久保山哲二, 新田州吾, 白石賢二, 押山淳. GaN有機金属気相成長におけるデジタルツイン開発の現状(特集「エピタキシャル成長の量子論における新展開:シミュレーションからデジタルツインへ」). 日本結晶成長学会誌. 2023. 50. 1. 50-1-05
寒川義裕, 草場彰. 窒化物半導体の化学気相成長における表面科学の進展(特集「結晶成長ダイナミクスの展望-平衡過程と非平衡過程の協奏-」). 表面と真空. 2023. 66. 4. 227-232
佐々木真, 河原吉伸, 草場彰. データ駆動アプローチを用いた動的乱流現象の解析(小特集「磁場閉じ込め核融合プラズマにおけるデータ駆動アプローチによる物理モデリングの進展」). プラズマ・核融合学会誌. 2021. 97. 2. 79-85

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Lectures and oral presentations (113)：

Determination of Local Electron Counting Rule Satisfaction by SAT Solver
(9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9) 2024)
Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces
(10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024) 2024)
Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces
(10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024) 2024)
ベイズ最適化とデータ同化による半導体気相成長モデリング
(日本学術振興会R032委員会第16回研究会 2024)
スパースモデリングを用いたスパッタAlN膜の高温アニールプロセスの条件探索
(第14回半導体材料・デバイスフォーラム 2023)

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Education (3)：

2016 - 2019 Kyushu University Graduate School of Engineering Doctoral Program, Department of Aeronautics and Astronautics
2014 - 2016 Kyushu University Graduate School of Engineering Master's Program, Department of Aeronautics and Astronautics
2010 - 2014 Kyushu University School of Engineering Department of Mechanical and Aerospace Engineering

Professional career (1)：

Work history (3)：

2023/12 - 現在 Kyushu University Research Institute for Applied Mechanics Associate Professor
2020/06 - 2023/11 Kyushu University Research Institute for Applied Mechanics Assistant Professor
2019/04 - 2020/05 Japan Society for the Promotion of Science Research Fellow

Committee career (2)：

Awards (13)：

2021/10 - 日本結晶成長学会第19回奨励賞非平衡量子熱力学によるGaN気相成長プロセスの解明
2021/01 - International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021) Outstanding Poster Award Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth
2020/02 - 第25回電子デバイス界面テクノロジー研究会服部賞 GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関:第一原理計算に基づく理論解析
2019/11 - 第80回応用物理学会秋季学術講演会講演奨励賞らせん転位およびMg不純物を含むGaNの電子構造解析
2019/05 - Compound Semiconductor Week 2019 (CSW 2019) CSW Best Student Paper Award Electronic structure analysis of core structures of threading dislocations in GaN

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Association Membership(s) (2)：

The Japan Society of Applied Physics , The Japanese Association for Crystal Growth

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