Rchr
J-GLOBAL ID:201801020538216967
Update date: Jun. 18, 2024
Okada Narihito
オカダ ナリヒト | Okada Narihito
Affiliation and department:
Research field (2):
Crystal engineering
, Electric/electronic material engineering
Research keywords (3):
HVPE
, MOVPE
, Nitride Semiconductor
Research theme for competitive and other funds (6):
- 2019 - 2021 Operation of V-pit formation originated from dislocations and clarification of dislocation invalidation mechanism in GaN-based LEDs
- 2016 - 2019 High performance and controlling optical polarization for unpolar optical devices using hetero middle layer
- 2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- 2012 - 2014 Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template
- 2008 - 2010 Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes
- 2008 - 2009 Evaluation of crystalline quality of GaInN grown on high-quality nonpolar or semipolar GaN
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Papers (131):
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Kosuke Inai, Ryota Oshimura, Kunio Himeno, Megumi Fujii, Yuta Onishi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates. physica status solidi (b). 2024
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Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN-Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm. physica status solidi (b). 2024
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Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Temperature- and Excitation Power Density-Resolved Photoluminescence of AlGaN-Based Multiple Quantum Wells Emitting in the Spectral Range of 220-260 nm. physica status solidi (b). 2024
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Minagi Miyamoto, Wataru Matsumura, Ryo Okuno, Syunsuke Matsuda, Koki Hanasaku, Taketo Kowaki, Daisuke Inahara, Satoshi Kurai, Narihito Okada, Yoichi Yamada. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates. Japanese Journal of Applied Physics. 2023. 62. SN. SN1016-SN1016
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Taketo Kowaki, Wataru Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, Shunsuke Matsuda, Satoshi Kurai, Yongzhao Yao, Yukari Ishikawa, Narihito Okada, et al. Si Doping Effects in AlGaN Channel Layer on Performance of N-polar AlGaN/AlN FETs. physica status solidi (a). 2023
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MISC (25):
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中生拓希, 姫野邦夫, 武田椋平, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Analysis of luminescence efficiency curve at high excitation condition in deep UV AlGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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押村遼太, 稲井滉介, 草場崇史, 藤井厚志, 倉井聡, 岡田成仁, 室谷英彰, 上杉謙次郎, 三宅秀人, 山田陽一. Internal quantum efficiency of AlGaN quantum wells on various AlN templates. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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中津留圭悟, 南里翼, 倉井聡, 岡田成仁, 只友一行, 室谷英彰, 矢野良樹, 小関修一, 松本功, 山田陽一. Excitation wavelength dependence of internal quantum efficiency in green InGaN-based quantum well structures. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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姫野邦夫, 武田椋平, 中生拓希, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Recombination dynamics of AlGaN-based UV-B quantum well structures using exciton rate equation model. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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中津留圭悟, 橋口勇樹, 室谷英彰, 倉井聡, 岡田成仁, 只友一行, 矢野良樹, 小関修一, 松本功, 山田陽一. Correlation between emission efficiency curve analysis and radiative and non-radiative recombination dynamics in green InGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2020. 2020 (Web)
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Lectures and oral presentations (1):
Education (1):
- - 2008 Meijo University Science and Engineering
Professional career (1):
Work history (3):
- 2018/04 - 現在 Yamaguchi univerisity Graduate School of Sciences and Technology for Innovation Associate Professor
- 2010/05 - 2016/04 YAMAGUCHI UNIVERSITY Graduate School of Sciences and Technology for Innovation Assistant Professor
- 2010/02/24 - 2010/05/17 YAMAGUCHI UNIVERSITY Graduate School of Science and Engineering(Engineering)
Committee career (18):
- 2020 - 現在 ISPlasma Paper Committee Member
- 2016 - 現在 LEDIA 実行委員
- 2016 - 現在 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 幹事
- 2009 - 現在 応用物理学会中国四国支部 研究会企画委員
- - 現在 Local Executive Committee Member
- 2022/04 - 2022/12 第14回ナノ構造エピタキシャル成長講演会 現地実行委員長
- 2022/04 - 2022/12 The 9th Meeting on. Advanced Power Semiconductors Division. Exhibition committee member
- 2020/09 - 2021/09 応用物理学会中四国支部大会 運営委員 JSAP Chugoku Steering Committee Member
- 2017 - 2018 IWN2018 実行委員
- 2017 - 2018 ICMOVPE2018 実行委員
- 2015 - 2015 ISGN-6 実行委員
- 2014 - 2014 IUMRS2014 実行委員
- 2012 - 2013 応用物理学会中四国支部大会 運営委員
- 2012 - 2013 EMS 実行委員
- 2012 - 2012 IWN2012 実行委員
- 2012 - 2012 応用物理学会中四国支部大会若手研究会 実行委員長
- 2012 - 2012 2012年度応用物理学会中四国支部大会 実行委員
- 2012 - 2012 IWN2012 Proceedings JJAP特集号 編集委員
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Awards (7):
- 2021 - 応用物理学会 JJAP/APEX Reviewer Aword
- 2018/03 - 応用物理学会 2018年度支部学術講演会発表奨励賞 選択横方向成長による高品質 AlN のストライプ方位依存性
- 2018 - 応用物理学会 第17回(2018年度)APEX/JJAP編集貢献賞
- 2017/03 - OPIC The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA`17) Young Researcher’s Paper Award Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
- 2012/05 - 応用物理学会 第32回(2012年春季)応用物理学会「講演奨励賞」 ハイドライド気相成長による非極性面GaNの低転位化
- 2012 - 応用物理学会 2012年度支部学術講演会発表奨励賞 {11-22} InGaN層の選択横方向成長と評価
- 2010/05 - 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞 サファイア加工基板を用いいた非極性面GaNとその成長機構に関する研究
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