Rchr
J-GLOBAL ID：201801020538216967   Update date: Oct. 09, 2024

Okada Narihito

オカダ ナリヒト | Okada Narihito
Affiliation and department：
Yamaguchi University

About Yamaguchi University


Research field  (2)： Crystal engineering ,  Electric/electronic material engineering
Research keywords  (3)： HVPE ,  MOVPE ,  Nitride Semiconductor
Research theme for competitive and other funds  (6)：
  • 2019 - 2021 Operation of V-pit formation originated from dislocations and clarification of dislocation invalidation mechanism in GaN-based LEDs
  • 2016 - 2019 High performance and controlling optical polarization for unpolar optical devices using hetero middle layer
  • 2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
  • 2012 - 2014 Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template
  • 2008 - 2010 Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes
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Papers (136)：
  • Narihito Okada, Ryota Hidaka, Taketo Kowaki, Takahiro Saito, Yoshihiro Sugawara, Daisaku Yokoe, Yongzhao Yao, Yukari Ishikawa, Satoshi Kurai, Yoichi Yamada, et al. Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion. Journal of Applied Physics. 2024. 136. 2
  • Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Satoshi Kurai, Narihito Okada, Yoichi Yamada. Electrical Properties of N-Polar GaN/AlGaN/AlN Grown via Metal-Organic Vapor Phase Epitaxy. physica status solidi (a). 2024
  • Taketo Kowaki, Koki Hanasaku, Minagi Miyamoto, Aina Hiyama Zazuli, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada, et al. Effect of the Twist Crystallinity of N-Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures. physica status solidi (a). 2024
  • Kosuke Inai, Ryota Oshimura, Kunio Himeno, Megumi Fujii, Yuta Onishi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates. physica status solidi (b). 2024
  • Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN-Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm. physica status solidi (b). 2024
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MISC (30)：
  • 菅原義弘, 姚永昭, 横江大作, 佐藤功二, 石川由加里, 岡田成仁, 只友一行, 須藤正喜, 加藤正史, 三好実人, et al. GaN結晶の光学特性に影響を及ぼす転位の構造評価. JFCC研究成果集. 2023. 2023
  • 姚永昭, 平野馨一, 佐藤功二, 菅原義弘, 横江大作, 岡田成仁, 只友一行, 佐々木公平, 倉又朗人, 石川由加里. Three-dimensional visualization of the curvature of crystal planes in wide bandgap semiconductor wafers using X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
  • 日高遼太, 奥野椋, 小脇岳土, YAO Y., 石川由加里, 菅原義弘, 横江大作, 平山秀樹, 倉井聡, 岡田成仁, et al. Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
  • 安高和哉, LU You, 松村航, 花咲光基, YAO Y., 石川由加里, 菅原義弘, 横江大作, 倉井聡, 岡田成仁, et al. Growth of N-polar AlN using polarity inversion and pulse H2 etching. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
  • 中生拓希, 姫野邦夫, 武田椋平, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Analysis of luminescence efficiency curve at high excitation condition in deep UV AlGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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Lectures and oral presentations  (1)：
  • Transistor
    (2022)
Education (1)：
  • - 2008 Meijo University Science and Engineering
Professional career (1)：
  • 工学 (名城大学)
Work history (3)：
  • 2018/04 - 現在 Yamaguchi univerisity Graduate School of Sciences and Technology for Innovation Associate Professor
  • 2010/05 - 2016/04 YAMAGUCHI UNIVERSITY Graduate School of Sciences and Technology for Innovation Assistant Professor
  • 2010/02/24 - 2010/05/17 YAMAGUCHI UNIVERSITY Graduate School of Science and Engineering(Engineering)
Committee career (18)：
  • 2020 - 現在 ISPlasma Paper Committee Member
  • 2016 - 現在 LEDIA 実行委員
  • 2016 - 現在 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 幹事
  • 2009 - 現在 応用物理学会中国四国支部 研究会企画委員
  • - 現在 Local Executive Committee Member
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Awards (7)：
  • 2021 - 応用物理学会 JJAP/APEX Reviewer Aword
  • 2018/03 - 応用物理学会 2018年度支部学術講演会発表奨励賞 選択横方向成長による高品質 AlN のストライプ方位依存性
  • 2018 - 応用物理学会 第17回(2018年度)APEX/JJAP編集貢献賞
  • 2017/03 - OPIC The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA`17) Young Researcher’s Paper Award Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
  • 2012/05 - 応用物理学会 第32回(2012年春季)応用物理学会「講演奨励賞」 ハイドライド気相成長による非極性面GaNの低転位化
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