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J-GLOBAL ID:201802211310242727   Reference number:18A0118338

Wettability improvement of thin gate dielectrics by mixture of self-assembled monolayers

自己組織化分子の混合による極薄絶縁膜の濡れ性改善
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Volume: 117  Issue: 334(OME2017 35-48)  Page: 15-18  Publication year: Nov. 24, 2017 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Manufacturing technology of solid-state devices 
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