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J-GLOBAL ID：201802213305738745   Reference number：18A0969569

Surface and bulk electronic structures of unintentionally and Mg-doped In_0.7Ga_0.3N epilayer by hard X-ray photoelectron spectroscopy

硬X線光電子分光法による無意図およびMgドープIn_0.7Ga_0.3Nエピ層の表面およびバルク電子構造【JST・京大機械翻訳】

Author (16)： Imura Masataka (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Tsuda Shunsuke (NIMS, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan) ,  Takeda Hiroyuki (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Nagata Takahiro (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Banal Ryan G. (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Yoshikawa Hideki (NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan) ,  Yang AnLi (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Yamashita Yoshiyuki (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Kobayashi Keisuke (Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Kouto, Sayo-cho, Sayo, Hyogo 679-5148, Japan) ,  Koide Yasuo (National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Yamaguchi Tomohiro (Faculty of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiouji, Tokyo 192-0015, Japan) ,  Kaneko Masamitsu (Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan) ,  Uematsu Nao (Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan) ,  Wang Ke (Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan) ,  Araki Tsutomu (Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan) ,  Nanishi Yasushi (Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 123  Issue： 9  Page： 095701-095701-8  Publication year： 2018 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The surface and bulk electroni...

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Thesaurus term： numerical analysis ,  *electronic structure ,  MBE growth ,  *doping ,  *Photoelectron Spectroscopy ,  interface (surface) ,  *Magnesium ,  soft X-ray ,  spectrum ,  quantum well ,  Fermi level ,  valence band ,  energy band ,  band bending ,  *epitaxial layer

JST classification (5)： Electronic structure of crystalline semiconductors  (BM02060N) ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Electronic structure of surfaces  (BM02080J) ,  Solid-state plasmas  (BM02160W) ,  Semiconductor thin films  (BK14040E)

Terms in the title (7)： 硬X線光電子分光 ,  意図 ,  Mg ,  ドープ ,  エピ層 ,  バルク ,  電子構造