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J-GLOBAL ID:201802213305738745   Reference number:18A0969569

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

硬X線光電子分光法による無意図およびMgドープIn_0.7Ga_0.3Nエピ層の表面およびバルク電子構造【JST・京大機械翻訳】
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Volume: 123  Issue:Page: 095701-095701-8  Publication year: 2018
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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The surface and bulk electroni...
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Electronic structure of crystalline semiconductors  ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds  ,  Electronic structure of surfaces  ,  Solid-state plasmas  ,  Semiconductor thin films 

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