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J-GLOBAL ID：201802215163360616   Reference number：18A1149845

Monte Carlo analysis by direct measurement using V_th-shiftable SRAM cell TEG

V_thシフトSRAMセルTEGを用いた直接測定によるモンテカルロ解析【JST・京大機械翻訳】

Author (4)： Yamaguchi Shogo (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka, JAPAN 820-8502) ,  Nishikata Daisuke (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka, JAPAN 820-8502) ,  Imi Hitoshi (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka, JAPAN 820-8502) ,  Nakamura Kazuyuki (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka, JAPAN 820-8502)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2018  Issue： ICMTS  Page： 93-96  Publication year： 2018 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The measurement system in whic...

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Thesaurus term： noise (signal) ,  voltage fluctuation ,  measurement system ,  memory element ,  MOSFET ,  *SRAM ,  voltage ,  electrolytic condenser ,  *Monte Carlo Method ,  transistor ,  simulation ,  relay ,  *direct determination

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (6)： シフト ,  SRAM ,  セル ,  TEG ,  直接測定 ,  モンテカルロ解析