Art
J-GLOBAL ID:201802215773994046   Reference number:18A1859637

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

三ハロゲン化物気相エピタクシーによるn極GaN成長の成長温度と過剰塩素効果【JST・京大機械翻訳】
Author (8):
Material:
Volume: 502  Page: 7-13  Publication year: 2018 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
Japanese summary of the article(about several hundred characters).
All summary is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
In this paper, we investigated...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=18A1859637&from=J-GLOBAL&jstjournalNo=B0942A") }}
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films 

Return to Previous Page