Art

J-GLOBAL ID：201802226293164474   Reference number：18A2149243

Nickel nitride semiconductor was synthesized by thermal chemical vapor deposition

窒化ニッケル半導体は,熱化学蒸着

Author (4)： MORIOKA R. (National Inst. Technol., Matsue Coll., Shimane, JPN) ,  ICHIKAWA K. (National Inst. Technol., Matsue Coll., Shimane, JPN) ,  AKAMATSU H. (Kobe City Coll. Technol., Hyogo, JPN) ,  OHSHIMA T. (National Inst. Technol., Sasebo Coll., Nagasaki, JPN)
Material： Proceedings of International Symposium on Dry Process  (Proc Int Symp Dry Process)
Volume： 40th  Page： 179-180  Publication year： 2018 
JST Material Number： Y0378B  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *nitride ,  *nickel compound ,  *compound semiconductor ,  *thermal chemical vapor deposition ,  X-ray diffraction ,  band gap ,  spectrophotometry(analysis) ,  ultraviolet and visible absorption spectrum ,  rectification(electric) ,  Schottky barrier diode ,  current-voltage characteristic ,  reaction time
Semi thesaurus term： thermal chemical vapor deposition ,  UV-Vis spectrophotometry ,  *wide band gap semiconductor

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (3)： 窒化 ,  ニッケル ,  熱化学蒸着