Art

J-GLOBAL ID：201802245977236796   Reference number：18A0994660

Type-II HfS₂/MoS₂ Heterojunction Transistors

II型HfS₂/MoS₂ヘテロ接合トランジスタ

Author (6)： NETSU Seiko (Department of Physical Electronics, Tokyo Institute of Technology) ,  KANAZAWA Toru (Department of Physical Electronics, Tokyo Institute of Technology) ,  UWANNO Teerayut (Department of Materials Engineering, The University of Tokyo) ,  AMEMIYA Tomohiro (Department of Physical Electronics, Tokyo Institute of Technology) ,  NAGASHIO Kosuke (Department of Materials Engineering, The University of Tokyo) ,  MIYAMOTO Yasuyuki (Department of Physical Electronics, Tokyo Institute of Technology)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E101.C  Issue： 5  Page： 338-342(J-STAGE)  Publication year： 2018 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *hafnium compound ,  *molybdenum sulfide ,  *FET ,  laminate structure ,  ratio ,  transistor ,  threshold ,  *passivation ,  subthreshold ,  *molybdenum(IV) sulfide ,  *modification
Semi thesaurus term： tunnel field effect transistor ,  van der Waals heterostructures ,  on-off ratio ,  *passivation ,  *molybdenum disulfide ,  *heterojunction field-effect transistor

Author keywords (5)： TMDC ,  MoS₂ ,  HfS₂ ,  tunnel FET ,  heterojunction

JST classification (2)： Transistors  (NC03070N) ,  Semiconductor integrated circuit  (NC03162T)

Reference (10)：

• [1] T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, and A. Javey, “Dual-gated MoS₂/WSe₂ van der Waals tunnel diodes and transistors,” ACS Nano, vol.9, no.2, pp.2071-2079, 2015. 10.1021/nn507278b
• [2] T. Roy, M. Tosun, M. Hettick, G.H. Ahn, C. Hu, and A. Javey, “2D-2D tunneling field effect transistors using WSe₂/SnSe₂ heterostructures,” Appl. Phys. Lett., vol.108, no.8, 083111, 2016. 10.1063/1.4942647
• [3] D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P.M. Ajayan, and K. Banerjee, “A subthermionic tunnel field-effect transistor with an atomically thin channel,” Nature, vol.526, no.7571, pp.91-95, 2015. 10.1038/nature15387
• [4] C. Gong, H. Zhang, W. Wang, L. Colombo, R.M. Wallace, and K. Cho, Erratum, “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors,” Appl. Phys. Lett., vol.107, no.13, 139904, 2015. 10.1063/1.4932088
• [5] T. Uwanno, Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system,” 2D Mater., vol.2, no.4, 41002, 2015. 10.1088/2053-1583/2/4/041002

Terms in the title (3)： MoS2 ,  ヘテロ接合 ,  トランジスタ