Art
J-GLOBAL ID:201802249890911243   Reference number:18A0969037

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

Ge(111)基板上に成長させたInGaAs被覆層に対するGaSbバッファ層の効果:歪,双晶発生,および表面粗さ【JST・京大機械翻訳】
Author (5):
Material:
Volume: 123  Issue: 16  Page: 161593-161593-7  Publication year: 2018 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
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InGaAs layers were grown by mo...
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JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films 

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