Art
J-GLOBAL ID:201802251238160302   Reference number:18A1036841

Influence of annealing atmosphere on crystallization of amorphous Si1-x Ge x thin film by Raman spectroscopy

Raman分光法による非晶質Si_1-xGe_x薄膜の結晶化に及ぼす焼なまし雰囲気の影響【JST・京大機械翻訳】
Author (3):
Material:
Volume: 658  Page: 61-65  Publication year: 2018 
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
Abstract/Point:
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The influence of annealing atm...
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JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
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