Art

J-GLOBAL ID：201802251750294654   Reference number：18A1550128

An over 18%-efficient completely buffer-free Cu(In,Ga)Se₂ solar cell

18%以上の変換効率を持つ完全にバッファ層フリーのCu(In,Ga)Se₂太陽電池

Author (4)： ISHIZUKA Shogo (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  NISHINAGA Jiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KOIDA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SHIBATA Hajime (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Applied Physics Express  (APEX)
Volume： 11  Issue： 7  Page： 075502.1-075502.4  Publication year： Jul. 2018 
JST Material Number： F0599C  ISSN： 1882-0778  CODEN： APEPC4  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *solar cell ,  *photovoltage ,  conductive property ,  front(face) ,  dipping ,  acceptor ,  activation ,  *energy conversion efficiency ,  semiconductor thin film ,  *doping ,  *silicon ,  boron ,  zinc oxide ,  *membrane electrode ,  layer ,  *optical absorption ,  compound semiconductor
Semi thesaurus term： *CIGS solar battery ,  光吸収層

JST classification (1)： Solar cell  (NC03084O)

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Terms in the title (5)： 変換効率 ,  バッファ層 ,  Cu ,  Ga ,  太陽電池