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J-GLOBAL ID:201802262792771299   Reference number:18A1698827

規則配列化InNドットの作製に向けた立方晶GaN表面ステップ構造の成長条件依存性

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Material:
Volume: 79th  Page: ROMBUNNO.19p-PA4-25  Publication year: Sep. 05, 2018 
JST Material Number: Y0055B  ISSN: 2758-4704  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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Semiconductor thin films  ,  Surface structure of semiconductors 

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