Art

J-GLOBAL ID：201802269443615352   Reference number：18A0971916

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

高出力垂直デバイスのための高い横方向分解能を持つMgドープGaNのレーザ誘起局所活性化【JST・京大機械翻訳】

Author (7)： Kurose Noriko (Ritsumeikan University, 1-1-1, Noji-Higashi, Kusatsu, Shiga 525-8577, Japan) ,  Matsumoto Kota (Toyota Technological Institute, Tempaku-ku, Nagoya, Aichi 468-8511, Japan) ,  Yamada Fumihiko (Toyota Technological Institute, Tempaku-ku, Nagoya, Aichi 468-8511, Japan) ,  Roffi Teuku Muhammad (Toyota Technological Institute, Tempaku-ku, Nagoya, Aichi 468-8511, Japan) ,  Kamiya Itaru (Toyota Technological Institute, Tempaku-ku, Nagoya, Aichi 468-8511, Japan) ,  Iwata Naotaka (Toyota Technological Institute, Tempaku-ku, Nagoya, Aichi 468-8511, Japan) ,  Aoyagi Yoshinobu (Ritsumeikan University, 1-1-1, Noji-Higashi, Kusatsu, Shiga 525-8577, Japan)
Material： AIP Advances (Web)
Volume： 8  Issue： 1  Page： 015329-015329-5  Publication year： 2018 
JST Material Number： U7121A  ISSN： 2158-3226  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A method for laser-induced loc...

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Thesaurus term： FET ,  *doping ,  electric current ,  *gallium nitride ,  insulator ,  *Magnesium ,  Schottky barrier diode ,  *resolving power ,  bipolar transistor ,  blocking layer ,  *laser induced ,  *high power output

JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Semiconductor thin films  (BK14040E)

Terms in the title (9)： 高出力 ,  垂直 ,  横方向 ,  分解能 ,  Mg ,  ドープ ,  GaN ,  レーザ誘起 ,  活性化