Art

J-GLOBAL ID：201802273149058944   Reference number：18A1622467

GaN Lateral Schottky Diodes with High Baliga’s Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology

自己終端,低損傷アノードリセス技術を用いた高いBaligaの性能指数を持つGaN横方向Schottkyダイオード【JST・京大機械翻訳】

Author (6)： Gao J. (School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China) ,  Jin Y. (School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China) ,  Xie B. (Institute of Microelectronics, Peking University, Beijing, 100871, China) ,  Wen C. P. (Institute of Microelectronics, Peking University, Beijing, 100871, China) ,  Hao Y. (Institute of Microelectronics, Peking University, Beijing, 100871, China) ,  Wang M. (Institute of Microelectronics, Peking University, Beijing, 100871, China)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2018  Issue： DRC  Page： 1-2  Publication year： 2018 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： AlGaN/GaN lateral diodes on si...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=18A1622467&from=J-GLOBAL&jstjournalNo=W2441A") }}

Thesaurus term： *anode ,  concave ,  plasma ,  dry etching ,  *diode ,  silicon ,  heterojunction ,  leakage current ,  interface(surface) ,  shock(mechanics) ,  *gallium nitride ,  *performance index
Semi thesaurus term： 絶縁破壊電圧 ,  表面形態 ,  AlGaN/GaN , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (7)： 自己 ,  終端 ,  損傷 ,  性能指数 ,  GaN ,  横方向 ,  Schottkyダイオード