Art
J-GLOBAL ID:201802284594302905   Reference number:18A1882722

Ag(111)表面上に偏析したGe原子が形成する二次元構造

Author (11):
Material:
Volume: 73  Issue:Page: ROMBUNNO.9pPSA-25  Publication year: Sep. 21, 2018 
JST Material Number: S0671C  ISSN: 2189-079X  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Surface structure of semiconductors 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page