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J-GLOBAL ID:201802286908982020   Reference number:18A1353561

Detection of local vibrational modes induced by intrinsic defects in undoped BaSi2 light absorber layers using Raman spectroscopy

Raman分光法を用いた非ドープBaSi_2光吸収層における固有欠陥により誘起された局所振動モードの検出【JST・京大機械翻訳】
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Volume: 124  Issue:Page: 025301-025301-8  Publication year: 2018 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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We fabricate BaSi2 ...
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Lattice defects in semiconductors  ,  Semiconductor thin films  ,  Ferroelectrics,antiferroelectrics and ferroelasticity  ,  Infrared spectra,Raman scattering and Raman spectra of inorganic compounds  ,  Infrared spectra,Raman scattering and Raman spectra of semiconductors 

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