Rchr
J-GLOBAL ID:201901012734922289   Update date: Apr. 08, 2023

Iizuka Takahiro

Iizuka Takahiro
Research field  (1): Electronic devices and equipment
Research keywords  (7): compact model ,  device physics ,  circuit simulation ,  device simulation ,  Process-Design Kit ,  carrier transport ,  semiconductor devices
Papers (69):
  • Soumajit Ghosh, M. Miura-Mattausch, T. Iizuka, Hafizur Rahaman, H. J. Mattausch. Analytical Vth Modeling for Dual-Gate MOSFETs With Independent Gate Control. IEEE Transactions on Electron Devices. 2022. 69. 10. 5456-5461
  • Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hafizur Rahaman, H. J. Mattausch. Operating-Condition Optimization of MG-MOSFETs for Low-Voltage Application. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 2022. 97-99
  • Soumajit Ghosh, M. Miura-Mattausch, T. Iizuka, Hafizur Rahaman, H. J. Mattausch. Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs. IEEE Journal of the Electron Devices Society. 2022. 10. 913-919
  • Takahiro Iizuka, Mitiko Miura-Mattausch, Dondee Serveza Navarro, Hideyuki Kikuchihara, Takuya Umeda, Hans Jürgen Mattausch, Takao Yamamoto. Miller-Capacitance Analysis of High-Voltage MOSFETs and Optimization Strategies for LowPower Dissipation. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2021. 2021-September. 44-47
  • Soumajit Ghosh, Takahiro Iizuka. History effect investigation in SOI MOSFET for minimizing impact on circuit performance. 4th International Symposium on Devices, Circuits and Systems, ISDCS 2021 - Conference Proceedings. 2021
more...
Patents (12):
Education (1):
  • 2011 - 2013 Hiroshima University Graduate School of Advanced Sciences of Matter
Work history (1):
  • 2023/04 - 現在 Hiroshima University HiSIM Research Center
Association Membership(s) (3):
応用物理学会 ,  電子情報通信学会 ,  IEEE
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