Ishikawa Mizue

イシカワミズエ | Ishikawa Mizue

Affiliation and department：
Job title： Assistant Professor

Research field (4)： Inorganic materials , Applied physics - general , Electric/electronic material engineering , Electronic devices and equipment

Research keywords (4)： SiスピンMOSFET , Heusler , Si spin , Spintronics

Research theme for competitive and other funds (3)：

2021 - 2024 SiスピンMOSFETの実現を可能とする低界面抵抗構造の創製
2023 - 2024 放射線下で動作する電子部品SiスピンMOSFETの試作開発
2019 - 2021 Development of highly efficient Si spin-MOSFETs by interface-controlled techniques

Papers (66)：

M. Ishikawa, Y. Saito, K. Hamaya. Study of spin transport and magnetoresistance effect in silicon-based lateral spin devices for spin-mosfet applications. Journal of the Magnetics Society of Japan. 2020. 44. 3. 56-63
Research rerated to spin relaxation mechanism and high efficiency spin injection/detection for Si spintronics devices. 大阪大学大学院基礎工学研究科システム創成専攻博士課程学位論文. 2019
A. Tiwari, H. Yoda, Y. Kato, K. Koi, M. Ishikawa, S. Oikawa, Y. Saito, T. Inokuchi, N. Shimomura, M. Shimizu, et al. Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis. IEEE International magnetic conference 2018 (Intermag 2018). 2018. ED-07
M. Ishikawa, M. Tsukahara, M. Yamada, Y. Saito, K. Hamaya. Local magnetoresistance at room temperature in Si<100> devices. IEEE Trans. Magn. 2018. 54. 1-4
Y. Kato, H. Yoda, Y. Saito, S. Oikawa, K. Fujii, M. Yoshiki, K. Koi, H. Sugiyama, M. Ishikawa, T. Inokuchi, et al. Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system. Appl. Phys. Express. 2018. 11. 053007

ｍore...

MISC (7)：

石川瑞恵, 浜屋宏平. Study of spin relaxation in n⁺-Si channel layers. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
Voltage-Control Spintronics Memory (VoCSM). 2017. 117. 118. 37-40
Voltage-Control Spintronics Memory (VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density. 2017. 117. 9. 1-4
Voltage-Control Spintronics Memory (VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density. 2017. 116. 448. 25-28
石川瑞恵, 石川瑞恵, 塚原誠人, 藤田裕一, 山田晋也, 杉山英行, 斉藤好昭, 浜屋宏平. Si〈100〉スピン伝導素子のスピン信号強度増大. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2017. 78th

ｍore...

Patents (71)：

ｍore...

Lectures and oral presentations (55)：

SiスピンMOSFETの実現に向けた高規則度ホイスラー合金の作製
(令和 6 年東北地区若手研究者研究発表会「音・光・電波・エネルギー・システム・材料とその応用」 2024)
スピン信号測定器の立上げ
(令和 6 年東北地区若手研究者研究発表会「音・光・電波・エネルギー・システム・材料とその応用」 2024)
SiスピンMOSFETの実現に向けた高濃度p型Si層の作製
(令和 6 年東北地区若手研究者研究発表会「音・光・電波・エネルギー・システム・材料とその応用」 2024)
SiスピンMOSFETの作製のためのマスク重ね合わせ条件出し
(令和 6 年東北地区若手研究者研究発表会「音・光・電波・エネルギー・システム・材料とその応用」 2024)
Fabrication of heavily-doped p-type Si layer for semiconductor based spin devices
(The 70th JSAP Spring Meeting 2023 2023)

ｍore...

Education (3)：

2016 - 2019 Osaka University Graduate School of Engineering Science Department of Systems Innovation
2004 - 2006 Osaka University Graduate School of Engineering Science Department of Materials Engineering Science
2000 - 2004 Nihon University College of Science and Technology Department of Physics

Professional career (1)：

Work history (2)：

2019/04/01 - Nihon University, College of Engineering Department of Electrical and Electronic Engineering Assistant Professor
2006/04/01 - 2018/07/31 Toshiba Corporation Corporate Research & Development Center

Awards (1)：

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page