Art
J-GLOBAL ID：201902004375465196   Reference number：19S2666035

Effects of a New Trench-Isolated Transistor Using Sidewall Gates

  • Publisher site Copy service
  • Access JDreamⅢ for advanced search and analysis.
Author (6)：
Hieda, Katsuhiko

About Hieda, Katsuhiko

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation

, 
Horiguchi, Fumio

About Horiguchi, Fumio

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation

, 
Watanabe, Hidehiro

About Watanabe, Hidehiro

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation

, 
Sunouchi, Kazumasa

About Sunouchi, Kazumasa

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation

, 
Inoue, Ikuko

About Inoue, Ikuko

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation

, 
Hamamoto, Takeshi

About Hamamoto, Takeshi

(ULSl Research Center, Toshiba Corporation)

About ULSl Research Center, Toshiba Corporation


Material：
IEEE Transactions on Electron Devices

About IEEE Transactions on Electron Devices


Volume： 36  Issue： 9  Page： 1615-1619  Publication year： 1989 
JST Material Number： SCOPUS  ISSN： 0018-9383 
Language： English (EN)

Return to Previous Page

TOP

BOTTOM