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J-GLOBAL ID：201902010078047210   Reference number：19S3009305

Heterointerface field effect transistor with 200 a-long gate

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Author (3)：
Ishibashi, Akira

About Ishibashi, Akira

(Sony Corporation Research Center)

About Sony Corporation Research Center

, 
Funato, Kenji

About Funato, Kenji

(Sony Corporation Research Center)

About Sony Corporation Research Center

, 
Mori, Yoshifumi

About Mori, Yoshifumi

(Sony Corporation Research Center)

About Sony Corporation Research Center


Material：
Japanese Journal of Applied Physics

About Japanese Journal of Applied Physics


Volume： 27  Issue： 12A  Page： L2382-L2384  Publication year： 1988 
JST Material Number： SCOPUS  ISSN： 0021-4922 
Language： English (EN)

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