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J-GLOBAL ID：201902014138416003   Reference number：19S2751482

Analysis of Annealing Effect on the Threshold Voltage Uniformity of GaAs Field Effect Transistors

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Author (3)：
Watanabe, Kazuo

About Watanabe, Kazuo

(NTT LSI Laboratories 3-1)

About NTT LSI Laboratories 3-1

, 
Hyuga, Fumiaki

About Hyuga, Fumiaki

(NTT LSI Laboratories 3-1)

About NTT LSI Laboratories 3-1

, 
Inoue, Naohisa

About Inoue, Naohisa

(NTT LSI Laboratories 3-1)

About NTT LSI Laboratories 3-1


Material：
Journal of the Electrochemical Society

About Journal of the Electrochemical Society


Volume： 138  Issue： 9  Page： 2815-2820  Publication year： 1991 
JST Material Number： SCOPUS  ISSN： 0013-4651 
Language： English (EN)
Terms in the title (1)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs


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