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J-GLOBAL ID：201902102091823710   Reference number：19S2350616

X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

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Author (2)：
Kurokawa, Akira

About Kurokawa, Akira

(Electrotechnical laboratory)

About Electrotechnical laboratory

, 
Ichimura, Shingo

About Ichimura, Shingo

(Electrotechnical laboratory)

About Electrotechnical laboratory


Material：
Japanese Journal of Applied Physics

About Japanese Journal of Applied Physics


Volume： 34  Issue： 12  Page： L1606-L1608  Publication year： 1995 
JST Material Number： SCOPUS  ISSN： 0021-4922 
Language： English (EN)
Terms in the title (1)：
Terms in the title
Keywords automatically extracted from the title.
XPS

About XPS


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